Details of Grant 

EPSRC Reference:	EP/D058686/1
Title:	Electron channelling contrast imaging in the scanning electron microscope for the characterisation of dislocations in nitride thin films
Principal Investigator:	Trager-Cowan, Dr C
Other Investigators:	Wilkinson, Professor AJ
Researcher Co-Investigators:
Project Partners:
Department:	Physics
Organisation:	University of Strathclyde
Scheme:	Standard Research (Pre-FEC)
Starts:	01 December 2005	Ends:	31 December 2006	Value (£):	62,032
EPSRC Research Topic Classifications:	Materials Characterisation
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:
Summary on Grant Application Form
We wish to investigate a technique in the scanning electron microscope, called electron channelling contrast imaging, which can reveal defects in thin films of semiconducting materials. We are particularly interested in nitride semiconducting thin films, for example gallium nitride, which are used in the manufacture of UV/blue laser diodes, UV/visible LEDs and white LEDs. Nitride laser diodes are presently dictating the development of next generation DVDs and developments in printing and colour copying. Present applications of nitride LEDs extend from street lighting, to back lighting in mobile phones, to traffic lights. Future use of nitride-based LEDs promises to revolutionise lighting in the home and office. Nitrides are also being developed for the production of high frequency, high power electronic devices. Scanning electron microscopes are generally used to produce images of the topography of the sample under study, however if the sample is tilted so that electrons channel down the crystal planes of the sample, then images of the sample which result from the channelled electrons will reveal any defects which distort the crystal planes. Such images are known as electron channelling contrast images and can be produced from semiconductor thin films without complicated sample preparation. In nitrides, defects known as threading edge and threading screw dislocations can affect the performance of devices so when producing devices it is important to know the type and density of dislocations in your films. We wish to investigate whether we can use electron contrast imaging to reveal and identify all the threading and edge dislocations present in our nitride thin films.
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Organisation Website:	http://www.strath.ac.uk