| EPSRC Reference: |
EP/E063519/1 |
| Title: |
Modelling transport in graphene-based transistors |
| Principal Investigator: |
McCann, Dr E |
| Other Investigators: |
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| Department: |
Physics |
| Organisation: |
Lancaster University |
| Scheme: |
First Grant Scheme |
| Starts: |
23 October 2007 |
Ends: |
22 April 2010 |
Value (£): |
198,342
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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Summary on Grant Application Form |
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Stable films of one-atom thick sheets of graphite, known as graphene, were fabricated for the first time in 2004. The discovery of this new material sparked a huge amount of interest because the charge carriers in graphene have fascinating and unique properties, and because graphene has huge potential for nanoelectronic applications. This theoretical proposal will model the electronic transport properties of ultra-thin graphene films only two or three atomic layers thick. It will investigate the influence of external gate potentials that can smoothly and controllably switch the films between metallic and semiconducting conduction properties. This will lead to the ability to electrostatically define complete circuits, including graphene-based transistors, on a single ultra-thin graphene film.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.lancs.ac.uk |