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Details of Grant 

EPSRC Reference: EP/E063519/1
Title: Modelling transport in graphene-based transistors
Principal Investigator: McCann, Dr E
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Lancaster University
Scheme: First Grant Scheme
Starts: 23 October 2007 Ends: 22 April 2010 Value (£): 198,342
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Stable films of one-atom thick sheets of graphite, known as graphene, were fabricated for the first time in 2004. The discovery of this new material sparked a huge amount of interest because the charge carriers in graphene have fascinating and unique properties, and because graphene has huge potential for nanoelectronic applications. This theoretical proposal will model the electronic transport properties of ultra-thin graphene films only two or three atomic layers thick. It will investigate the influence of external gate potentials that can smoothly and controllably switch the films between metallic and semiconducting conduction properties. This will lead to the ability to electrostatically define complete circuits, including graphene-based transistors, on a single ultra-thin graphene film.
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Organisation Website: http://www.lancs.ac.uk