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Details of Grant 

EPSRC Reference: EP/F03427X/1
Title: Strain engineered InAs/GaAs quantum dots for long wavelength emission
Principal Investigator: Hogg, Professor RA
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Electronic and Electrical Engineering
Organisation: University of Sheffield
Scheme: Standard Research
Starts: 11 August 2008 Ends: 10 August 2011 Value (£): 66,676
EPSRC Research Topic Classifications:
Lasers & Optics Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
EP/F033427/1
Panel History:
Panel DatePanel NameOutcome
06 Dec 2007 ICT Prioritisation Panel (Technology) Announced
Summary on Grant Application Form
Submitted by partner institution
Key Findings
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Potential use in non-academic contexts
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Impacts
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Summary
Date Materialised
Sectors submitted by the Researcher
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Project URL:  
Further Information:  
Organisation Website: http://www.shef.ac.uk