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EPSRC Reference:
EP/F03427X/1
Title:
Strain engineered InAs/GaAs quantum dots for long wavelength emission
Principal Investigator:
Hogg, Professor RA
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department:
Electronic and Electrical Engineering
Organisation:
University of Sheffield
Scheme:
Standard Research
Starts:
11 August 2008
Ends:
10 August 2011
Value (£):
66,676
EPSRC Research Topic Classifications:
Lasers & Optics
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
EP/F033427/1
Panel History:
Panel Date
Panel Name
Outcome
06 Dec 2007
ICT Prioritisation Panel (Technology)
Announced
Summary on Grant Application Form
Submitted by partner institution
Key Findings
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Potential use in non-academic contexts
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Impacts
Description
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Summary
Date Materialised
Sectors submitted by the Researcher
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Project URL:
Further Information:
Organisation Website:
http://www.shef.ac.uk