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Details of Grant 

EPSRC Reference: EP/J015563/1
Title: Yield and reliability enhancement techniques for novel memory devices
Principal Investigator: Pradhan, Professor D
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Hewlett Packard Intel Corporation Ltd STMicroelectronics
Department: Computer Science
Organisation: University of Bristol
Scheme: Standard Research
Starts: 24 August 2012 Ends: 23 December 2015 Value (£): 274,137
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:
Panel DatePanel NameOutcome
07 Dec 2011 EPSRC ICT Responsive Mode - Dec 2011 Announced
Summary on Grant Application Form
Describe the proposed research in simple terms in a way that could be publicised to a general audience [up to 4000 chars]. Note that this summary will be automatically published on EPSRC's website in the event that a grant is awarded.

The recently developed memory architectures based on resistive-variable devices such as Phase Charge Memories, Programmable Metallization Cell or memristors have reliability issues that are drastically different from those affecting CMOS based memories. These novel memories although based on different technologies, they all share the principle of storing information as the resistance value imposed to a resistive-variable devices and consequently also the possible type of faults that may occur.

This project proposes to leverage data obtained from experimental results to characterize resistive-variable devices and to exploit both information and architectural redundancies to enhance reliability and yield of these devices.

To face the presence of a massive number of defects suitable spare resources, such as spare row and/or columns will be used combined with suitable error detection methods and efficient readdressing scheme to substitute faulty elements. To leverage the use of spares resources, codes novel models and algorithms to estimate the reliability versus overhead trade-off will be developed, with the aim of obtaining a reliability-aware driven synthesis tool for these memory devices.

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Further Information:  
Organisation Website: http://www.bris.ac.uk