| EPSRC Reference: |
EP/N016610/1 |
| Title: |
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates |
| Principal Investigator: |
Forsyth, Professor A |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Electrical and Electronic Engineering |
| Organisation: |
University of Manchester, The |
| Scheme: |
Standard Research |
| Starts: |
01 July 2016 |
Ends: |
30 November 2020 |
Value (£): |
358,702
|
| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
Materials Characterisation |
| Materials Synthesis & Growth |
RF & Microwave Technology |
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| EPSRC Industrial Sector Classifications: |
| Communications |
Electronics |
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| Related Grants: |
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| Panel History: |
| Panel Date | Panel Name | Outcome |
|
20 Oct 2015
|
EPSRC ICT Prioritisation Panel - Oct 2015
|
Announced
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Summary on Grant Application Form |
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No summary is available for this grant.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.man.ac.uk |