Details of Grant 

EPSRC Reference:	EP/N018605/1
Title:	Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes
Principal Investigator:	Carrington, Dr P
Other Investigators:
Researcher Co-Investigators:
Project Partners:	Compound Semiconductor Tech Global Ltd Gas Sensing Solutions Ltd University Montpellier 2 University of Southampton
Department:	Engineering
Organisation:	Lancaster University
Scheme:	First Grant - Revised 2009
Starts:	01 May 2016	Ends:	31 January 2019	Value (£):	99,720
EPSRC Research Topic Classifications:	Materials Characterisation Materials Synthesis & Growth Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:	Manufacturing Communications Environment Healthcare
Related Grants:
Panel History:	Panel Date Panel Name Outcome 02 Dec 2015 EPSRC ICT Prioritisation Panel - Dec 2015 Announced
Summary on Grant Application Form
There is great worldwide interest in the mid-infrared spectral region (2-5 um) as it contains the fundamental absorption bands of a number of pollutant and toxic gases and liquids. These include gases such as carbon dioxide, carbon monoxide and hydrogen chloride which require accurate, in-situ multi-component monitoring in a number of industries such as oil-rigs, coal mines, land-fill sites and car exhausts. Strong absorption bands also exist for drug intermediates, pharmaceuticals, narcotics and biochemicals where the absorption strength is typically 2 orders of magnitude stronger than in the near-infrared allowing highly selective and sensitive detection in the fields of: environmental monitoring, bio-medicine, industrial process control and health and safety. There is also an atmospheric transmission window between 3.6 and 3.8 um which enables free space optical communication and thermal imaging in both civil and military situations as well as the development of infrared countermeasures for homeland security. However, these applications have yet to be fully exploited due to the lack of efficient and affordable light sources and detectors. This work proposes the growth and fabrication of a new light emitting diode (LED) architecture based on indium antimonide (InSb) quantum dots onto low cost silicon (Si) substrates. This will revolutionize how we utilize these devices and lead to a dramatic scaling in the cost and size of the optical systems to enable their widespread uptake. It will also enable the photonic components to be directly embedded into electronic circuits which would open up a new field of mid-infrared photonic integrated circuits. This would generate entirely new technology in areas such as integrated 'lab-on-a-chip' sensors and compact biochips bringing great commercial benefits and opportunities to the UK. In the last few years, there has been significant progress in the development of mid-infrared devices using interband cascade lasers and type II superlattices. However these structures are extremely complex and expensive to fabricate and are grown on gallium antimonide (GaSb) substrates which are of poor quality, high cost (~50 times the cost of Si) and are only available in small sizes. Growth onto silicon would be most desireable to enable cost effective manufacture and to ensure future commercial success. The major obstacle in direct epitaxial growth of III-Vs onto Si is the large lattice mismatch between the III-V/Si interface, resulting in a large density of threading dislocations (TDs) which strongly deteriorate the device performance. This project shall overcome this by implementation of a new device design based on InSb quantum dots on low defect density GaSb buffer layers grown on Si. The key advantages are the mechanical robustness and very low sensitivity of the quantum dots to TD compared to bulk or quantum well structures, and the suppression of non-radiative Auger recombination to increase the quantum efficiency. In a quantum well device, every threading dislocation which propagates through it will act as a non-radiative centre drastically reducing the device performance. However in a QD, each TD will only 'kill' one or a few isolated dots which will not significantly affect device performance providing the TD density in the buffer layer can be reduced to moderate-to-low levels. Low defect density GaSb buffer layers shall be realized through novel 'interfacial misfit arrays (IMF)' and dislocation filtering layers designed to bend and annihilate TD generated at the III-V/Si interface. The Si based mid-infrared LEDs will be developed in close collaboration with academic (University of Southampton and University of Montpellier) and industrial (Compound Semiconductor Technologies and Gas Sensing Solutions) project partners to evaluate device performance for use in practical applications which will help to achieve future commercialisation.
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Organisation Website:	http://www.lancs.ac.uk