EPSRC Reference: |
GR/A11038/02 |
Title: |
STRUCTURAL, OPTICAL AND ELECTRICAL CHARACTERISATION OF DEFFECT EVOLUTION IN ION-IMPLANTED SILICON |
Principal Investigator: |
Vernon-Parry, Dr KD |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Materials Research Institute |
Organisation: |
Sheffield Hallam University |
Scheme: |
Advanced Fellowship (Pre-FEC) |
Starts: |
01 May 2004 |
Ends: |
30 September 2006 |
Value (£): |
139,738
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Synthesis & Growth |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The aim of this work is to correlate structural, electrical and optical properties of ion-implanted silicon, as functions of annealing schedules and impurity concentrations, combining techniques I have developed or used in previous research contracts. A large part of the work will be to develop Electron Backscattered Diffraction (EBSD) pattern quality analysis as a non-destructive method of quantifying ion implantation damage and the evolution of interstitial clusters. This will be, to my knowledge, the first quantitative application of EBSD to this problem. High resolution (Laplace) Deep Level Transient Spectroscopy and photoluminescence will also be used to study the evolution of defects in ion-implanted silicon, implanted with a range of heavy and light ions. Cathodoluminescence will be developed in collaboration with Professor Davies's group at King's College, London, and used to follow the evolution of defects during annealing of ionimplanted silicon. The project will lead to an increased knowledge of aggregation of intrinsic defects into clusters, their quantification, and their detailed electronic properties.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.shu.ac.uk |