Details of Grant 

EPSRC Reference:	GR/A92095/01
Title:	OPTICAL AND ELECTRICAL DEVICES BASED ON NITRIDE SEMICONDUCTORS
Principal Investigator:	Martin, Professor RW
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department:	Physics
Organisation:	University of Strathclyde
Scheme:	Advanced Fellowship (Pre-FEC)
Starts:	01 March 2000	Ends:	28 February 2005	Value (£):	217,741
EPSRC Research Topic Classifications:	Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:	Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:
Summary on Grant Application Form
This proposal, concerning the development of advanced semiconductor devices using III-Nitride materials, builds on significant recent progress in III-Nitride light emitters. Three main research fronts are highlighted, with bearings on both the elucidation of the physics underlying current and next-generation InGaAIN-based devices and the development of novel applications of these materials. The origin of the highly efficient light emission from InGaN-based structures is still far from clear and I propose to build on my recent contributions to this topic with a range of experimental investigations. In particular further evidence for the presence of quantum dots, naturally formed due to indium segregation, will be sought and applied to the development of more efficient and/or longer wavelength devices. The second main area concerns present difficulties in fabricating surface emitting lasers using GaN materials. A novel route to such devices is described, which combines the demonstrated advantages of epitaxial lateral overgrowth of GaN with the implementation of mature dielectric mirror technologies. Finally investigations of electrical devices for high temperature, high power applications are described. The proposed work seeks to apply the improvements in III-Nitride material quality, that have been significant in laser development, to enhanced electrical performance, at present limited by high dislocation densities and large parasitic effects.
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Organisation Website:	http://www.strath.ac.uk