| EPSRC Reference: |
GR/G13587/01 |
| Title: |
ION BOMBARDMENT SIMULATED GROWTH OF SILICON CARBIDES |
| Principal Investigator: |
Carter, Professor G |
| Other Investigators: |
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| Department: |
Electronic and Electrical Engineering |
| Organisation: |
University of Salford |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 March 1992 |
Ends: |
31 May 1995 |
Value (£): |
95,315
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Summary on Grant Application Form |
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To establish the optimum conditions for ion bombardment stimulated growth of silicon carbide layers on carbon containing substrates in silicon vapour atmospheres. To investigate and understand the physical/chemical processes involved in such processes. To produce and assess such layers with advantageous tribological properties.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.salford.ac.uk |