| EPSRC Reference: |
GR/H18777/01 |
| Title: |
UNIVERSITY OF LONDON SEMICONDUCTOR MATERIALS IRC TWO YEAR RESOURCE REVIEW |
| Principal Investigator: |
Joyce, Professor BA |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Electronic Materials & Devices (IRC) |
| Organisation: |
Imperial College London |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 March 1992 |
Ends: |
31 March 1994 |
Value (£): |
7,146,789
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| Panel History: |
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Summary on Grant Application Form |
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The long term aim of the research programme is to develop clean, low temperature growth and processing techniques for silicon and III-V compounds, the complete characterisation of the material and its applications to low dimensional structures and three dimensional device architecture.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.imperial.ac.uk |