| EPSRC Reference: |
GR/H23085/01 |
| Title: |
HIGH TEMPERATURE MOS-GATED POWER SEMICONDUCTORS AND ADVANCED AIRCRAFT ELECTRIC POWER CONDITIONING SYSTEMS |
| Principal Investigator: |
Miller, Professor TJE |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Electronics and Electrical Engineering |
| Organisation: |
University of Glasgow |
| Scheme: |
LINK |
| Starts: |
01 April 1992 |
Ends: |
30 September 1995 |
Value (£): |
220,958
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Summary on Grant Application Form |
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1. Develop gate drive circuits and components including necessary control and sensing as enabling technology for application of a new IGBT to an aircraft power conditioning system; includes development of EMI/RFI strategy.2. Develop physical and equivalent-circuit models of the new IGBT for circuit design, protection and improved device structure.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.gla.ac.uk |