EPSRC Reference: |
GR/H62480/01 |
Title: |
PHTO-ASSISTED CHEMICAL BEAM EPITAXY |
Principal Investigator: |
Goodhew, Professor PJ |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Materials Science & Eng |
Organisation: |
University of Liverpool |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
14 June 1993 |
Ends: |
13 December 1996 |
Value (£): |
162,613
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EPSRC Research Topic Classifications: |
Materials Synthesis & Growth |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Photo-Assisted Chemical Beam Epitaxy (PACBE) of GaAs and AlGaAs enables high growth rates with reduced substrate temperatures thus reducing cross diffusion at interfaces. It also offers the prospect of localised and selective growth. Our work to date under grant GR/E 948522, which expires on 30.6.92, using a pulsed excimer laser at 308nm as the photon source has shown that high growth rates of single crystal GaAs are achieved pyrolytically but dislocations and stacking faults are introduced into the laser grown layer. Recent evidence suggests that with a CW photon source, such as an AR+ laser, growth enhancement occurs but via a mechanism which is not pyrolytic. Moreover, because of the continuous supply of photons and the very low thermal strain rates the defect concentration with a CW source is expected to be very low. The object of this proposal is the continuation, and extension to include CW sources, of the existing PACBE programme, which is aimed at the determination of the physical and chemical mechanisms involved in PACBE growth and producing defect free layers grown at reduced substrate temperatures which have desirable chemical and electrical characteristics.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.liv.ac.uk |