| EPSRC Reference: |
GR/H64170/01 |
| Title: |
OPTOELECTRONIC PROPERTIES OF STRAINED LAYER INGAAS/ALGAAS DEVICES |
| Principal Investigator: |
Williams, Dr R |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
Imperial College London |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
22 October 1992 |
Ends: |
21 October 1995 |
Value (£): |
148,599
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| EPSRC Research Topic Classifications: |
| Optoelect. Devices & Circuits |
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| EPSRC Industrial Sector Classifications: |
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| Panel History: |
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Summary on Grant Application Form |
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No summary is available for this grant.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.imperial.ac.uk |