EPSRC Reference: |
GR/J37591/01 |
Title: |
FABRICATION AND IN-SITU ELECTRICAL AND STRUCTURAL CHARACTERISATION OF NANOSCALE ELECTRONIC DEVICES |
Principal Investigator: |
Humphreys, Professor Sir C |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Materials Science & Metallurgy |
Organisation: |
University of Cambridge |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 January 1994 |
Ends: |
31 December 1996 |
Value (£): |
159,457
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EPSRC Research Topic Classifications: |
Materials Synthesis & Growth |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
It is proposed to fabricate nanoscale dots, wires and cylinders of metals (eg Al) and semiconductors (eg Si) using direct electron beam lithography. The nanostructures will have diameters about 2nm significantly smaller than those made using conventional electron beam lithography. The electrical properties of these nanostructures will be measured in-situ in UHV to minimise oxidation. It will be necessary to construct a new specimen stage and to modify the VG HB501 STEM in order to perform these electrical measurements in-situ. It may be possible to detect single electron quantum effects at room temperature for small enough nanostructures. It is proposed to study the electrical properties and structure of field emission tips and cones in-situ, including single atom field emission tips.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.cam.ac.uk |