Details of Grant 

EPSRC Reference:	GR/J49402/01
Title:	PRODUCTION AND CHARECTERISATION OF SILICON-BASED PHOTOLUMINESCENT AND ELECTROLUMINESCENT DEVICES
Principal Investigator:	Greef, Dr R
Other Investigators:	Parker, Professor G
Researcher Co-Investigators:
Project Partners:
Department:	Sch of Chemistry
Organisation:	University of Southampton
Scheme:	Standard Research (Pre-FEC)
Starts:	05 January 1994	Ends:	04 January 1996	Value (£):	152,663
EPSRC Research Topic Classifications:	Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:
Summary on Grant Application Form
Production of integrated Photoluminescent and electroluminescent devices in silicon, using quantum wire technology. Progress:As a preliminary investigation, we have studied the formation of conventional porous silicon and analysed the light emission, looking at the effect of the main etching parameters such as composition of the etchant, current density and etching time.We have progressed towards the establishment of the main methodology of our investigation, which is to repeat and extend the work of Lehmann and Fll on photoelectrochemical etching of prepatterned silicon to produce deeply etched pits. Using this method, large arrays of highly uniform cylindrical holes have been produced in silicon substrates, with a high length to diameter aspect ratio. By repeated oxidation/etching, these structures have been converted into arrays of silicon wires, and the diameter of the wires has been reduced to the point where the wires themselves are no longer self-supporting. Examples of such matrices of oxidised wires, where the oxide layer from the last stage oxidation has been retained to give self-supporting structures, are now under investigation by high-resolution TEM at Oxford University. Two further techniques for the production of quantum wires have been started:(i) V-grooves have been formed in silicon and await selective epitaxial growth of silicon germanium (SiGe) quantum wires.(ii) A process has been developed for the formation of silicon pillars using masking and ion-etching techniques.Both approaches are currently active. Planned work includes the investigation of light emission from the fabricated silicon and SiGe quantum wires arrays. The V-groove wires will be connected to external contacts for current injection measurements, and we will also attempt to inject current into the photoelectrochemical and ion-etched pillars.
Key Findings
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Potential use in non-academic contexts
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Impacts
Description This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk Summary Date Materialised
Sectors submitted by the Researcher
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Project URL:
Further Information:
Organisation Website:	http://www.soton.ac.uk