| EPSRC Reference: |
GR/J77436/01 |
| Title: |
CARBON DOPING IN GAAS, ALGAAS ANS INGAAS |
| Principal Investigator: |
Goodhew, Professor PJ |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Materials Science & Eng |
| Organisation: |
University of Liverpool |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
28 September 1994 |
Ends: |
27 September 1996 |
Value (£): |
151,693
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| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
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Summary on Grant Application Form |
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This programme is directed towards the control and understanding of carbon doping in III-V materials grown by CBE. In particular we will study the stability and site location of carbon in highly doped GaAs, and the behaviour of C in AlGaAs and InGaAs over a range of compositions. Local vibrational mode spectroscopy (LVM) will be used to determine site location while parallel TEM and SIMS studies will enable us to determine the stability of the dopant.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.liv.ac.uk |