EPSRC Reference: |
GR/J98394/01 |
Title: |
ADVANCED HIGH RESOLUTION PHOTOMASKS |
Principal Investigator: |
Cairns, Professor JA |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic Engineering and Physics |
Organisation: |
University of Dundee |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 June 1994 |
Ends: |
30 November 1995 |
Value (£): |
55,427
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EPSRC Research Topic Classifications: |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
(1) Preparation and optimisation of new Si/Ge photomasks.(2) Evaluation of their performance by UV lithography.Progress:(1) Influence of the Si/Ge ratio:We have produced a range of specimens with varying Si/Ge ratios and used these to investigate the properties described in the following sections.(2) Pattern production by reactive ion etching: We have investigated the conditions necessary to obtain optimised etching of the Si/Ge layers with particular reference to variations in RF power, gas pressure and gas flowrate. The gas used for this purpose was CF4/O2 (8%).(3) Absorption characteristics of Si/Ge films: These have been measured using a Shimadzu UV1201 optical spectrophotometer. These characteristics are important because of their vital role in ensuring accurate pattern transfer of the image.(4) Measurement of interfacial stress between Si/Ge films and silica:This characteristic, which is so vital for the production of high resolution, small isolated features, has been measured by making use of specially designed cantilever structures which we have fabricated in our own laboratories. We have shown, by optimising the Si/Ge ratio and the thickness of the film, that films can be produced which exhibit minimum interfacial stress.(5) Pattern transfer: We have arranged for resist-coated prototype Si/Ge mask blanks to be electron-beam exposed by IMEC in Belgium. Subsequently, we have subjected these to reactive ion etching and demonstrated the production of high resolution patterns from this material.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.dundee.ac.uk |