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EPSRC Reference: GR/K04859/01
Title: RESONANT RAMAN SCATTERING AND OPTICAL SPECTROSCOPY OF II-VI EPITAXIAL LAYERS AND HETEROSTRUCTURES
Principal Investigator: Wolverson, Professor D
Other Investigators:
Davies, Professor JJ
Researcher Co-Investigators:
Project Partners:
Department: Sch of Physics
Organisation: University of East Anglia
Scheme: Standard Research (Pre-FEC)
Starts: 20 February 1995 Ends: 19 June 1997 Value (£): 98,297
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Related Grants:
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Summary on Grant Application Form
Recent advances in epitaxial growth technology have led to the first blue-emitting II-VI semiconductor lasers, accompanied by the development of II-VI materials for a range of other optoelectronic uses. Much of the work has been pioneered with molecular beams, but there has also been striking progress in metal-organic vapour phase epitaxy, which may offer advantages, for industrial production. However, many problems remain to be solved before the potential of these material can be fully realised. These include; precise control of alloy compositions; controlled incorporation of uncompensated dopants; reduction of defect concentrations and of interdiffusion; and improved electrical contacting. A European network (including five growth centres and an industrial partner) has been established to study these problems, with emphasis on wide bandgap II-VI materials produced my MOVPE. The overall aims are to improve the quality of structures with active regions based on II-VI semiconductors, to assess the extent to which the requirements of device manufacture can be realised and to compare MOVPE structures with those produced by MBE> Studies of electronic and vibrational states via resonance Raman scattering and related optical techniques at UEA will form an essential part of this programme.
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Organisation Website: http://www.uea.ac.uk