EPSRC Reference: |
GR/K23775/01 |
Title: |
ATOMIC RESOLUTION STM STUDIES OF DOPANT DEPOSITION ON MBE GROWN III-V SEMICONDUCTOR SURFACES |
Principal Investigator: |
Jones, Professor TS |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Chemistry |
Organisation: |
Imperial College London |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
19 January 1995 |
Ends: |
18 January 1998 |
Value (£): |
14,314
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Surfaces & Interfaces |
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EPSRC Industrial Sector Classifications: |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The aim is to establish a formal collaboration between the applicants to carry out atomic resolution STM studies of III-V semiconductor surfaces grown in-situ by MBE. It will enable CFM to spend a sabbatical leave period from Warwick to work with TSJ at Imperial College and utilise an existing dedicated STM/MBE growth system, a facility which is unique within the UK . The programme will initially focus on imaging the reconstruction's formed on GaAs, InAs and InGaAs surfaces under a variety of growth conditions, in particular concentrating on the interpretation of STM images of III-V semiconductor surfaces. We aim to study the deposition of group IV dopants (Si, Ge, Sn) on these surfaces in order to probe the nature of the adsorption sites, the bonding at the surface and hence the mechanism of dopant incorporation into these materials. These adsorption studies will be further extended to include higher coverage's (monolayer and above) of dopant atoms in order to understand and attempt to improve the interfaces formed in delta-doped structures.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.imperial.ac.uk |