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Details of Grant 

EPSRC Reference: GR/K24277/01
Title: EMISSION PROCESSES IN SI/SIGE QUANTUM DOTS.
Principal Investigator: Sotomayor Torres, Professor C
Other Investigators:
Parker, Professor E
Researcher Co-Investigators:
Project Partners:
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 1994 Ends: 30 June 1995 Value (£): 42,953
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
It is proposed to study the main emission mechanisms in Si-SiGe quantum dots based upon recent observations of strong emission with narrow linewidth which survives up to about 100 Kelvin. The main work is to determine, understand and control the emission mechanisms in quantum dots (down to 30-40 nm) fabricated by electron-beam lithography and dry etching. Thorough structural and optical characterisation of the starting and patterned material will be carried out. Special attention will be paid to the fabrication steps to minimise possible damage. The relevance of the sharp emission in quantum dots to Si-based optoelectronics is obvious. We will aim to maximise the use of this emission keeping the sharpness and brightness to room temperature. If the emission is mainly intrinsic there are exciting possibilities of investigating the indirect to direct band-gap conversion. If the emission is extrinsic (eg the G-line in Si) there are challenging prospects involving a combination of lateral confinement, carrier localisation, surface phenomena, strain relief and deep impurities in dots, areas hardly explored in 1 and O-D Si-SiGe. Technology processes towards the fabrication of an electroluminescence-based device will be undertaken.
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