EPSRC Reference: |
GR/K24581/01 |
Title: |
DIAMOND EXPITAXIAL LAYERS FOR ELECTRONIC DEVICES |
Principal Investigator: |
John, Professor P |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Sch of Engineering and Physical Science |
Organisation: |
Heriot-Watt University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 October 1994 |
Ends: |
30 September 1995 |
Value (£): |
151,343
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Processing |
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EPSRC Industrial Sector Classifications: |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The research programme aims to improve the quality of heteroepitaxial films in order to fulfil the potential of diamond for advanced electronic devices. This is to be achieved through the development of a high power microwave reactor to grow epitaxial films with good uniformity over large areas. In order to achieve this, a multi faceted approach is needed. First, we intend to study the interfacial layers between silicon and diamond using in-situ XPS and correlate the results with other surface analysis techniques. Secondly, Raman scattering will be employed to study the degree of alignment and will form a rapid assessment technique for the growth programme. Using a recently invented processes, attempts will be made to grow tilted polycrystalline diamond films with low angle grain boundaries. With partners, we aim to study the basic science underpinning diamond processing and fabrication. Finally, diamond devices will be fabricated in conjunction with collaborators.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.hw.ac.uk |