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Details of Grant 

EPSRC Reference: GR/K26585/01
Title: DEVELOPMENT OF A SELECTIVE AND LOW DAMAGE DRY ETCH PROCESS FOR III-V SEMICONDUCTOR OPTICAL DEVICES
Principal Investigator: Wilkinson, Professor C
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Nortel
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1994 Ends: 30 September 1996 Value (£): 116,412
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Develop a selective and low damage etch for In-containing III-V semiconductors, using SiC14 at elevated temperatures in the first instance. Related halogen etch systems will be investigated as necessary. Characterise surface and sidewall damage. Establish conditions for vertical etching and for very fast etching. Use demonstrators (Quantum well DBR laser (Glasgow), MMIC (Glasgow) and vertical mirror device (BNR) to qualify each process.Progress:As of 1st February 1995In order to achieve controlled and elevated sample temperatures (100 to 300C) in the harsh RIE environment, a number of modifications have been made to the RIE machine. A hot-oil circulatory system has been investigated but found to be unsuitable due to insufficient heating capability and a tendency for the vacuum seals, in close proximity to the hot oil, to fail. Therefore an electrically heated platen has been designed to overcome these problems. This work involved the design of the heater element, various modifications to the rf electrode and chamber feed throughs, assembly of the heater supply and PID controller, and incorporation of fluoroptic thermometry as the temperature monitor. An rf filter has also been designed and constructed capable of protecting the heater circuitry from the peak-to-peak voltages of -1500 V conducted onto the heater platen from the rf electrode. The heater system is presently being tested. Wafers suitable for etch monitoring and Raman spectroscopy have been designed and subsequently grown using MOVPE at Sheffield University. Suitable mask patterns have been designed and samples have been prepared for etch process development.
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