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EPSRC Reference: GR/K31411/01
Title: IN(GAAL)AS/INP AND IN(GAAL)P/GAAS STRAINED LAYER HETER -OSTRUCTURES FOR ENHANCED OPTOELECTRONIC DEVICE APPLI
Principal Investigator: Kiely, Professor C
Other Investigators:
Goodhew, Professor PJ
Researcher Co-Investigators:
Project Partners:
Department: Materials Science & Eng
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 17 October 1994 Ends: 16 October 1996 Value (£): 88,548
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
In this programme we propose to investigate two closely related quaternary semiconductor strained layer systems: InGaAlAs/InP and InGaAsP/GaAs. These particular materials systems have physical properties which make them potentially useful in optoelectronic devices such as lasers (including VCSELs), modulators and avalanche photodiodes. We propose to characterise the microstructure of these materials using a combination of TEM and XRD. In addition, evaluation of optical and electrical performance will be carried out using techniques such as PL lifetime and diode leakage measurements.Altering the quaternary composition in these particular systems allows us to control the extent of misfit strain between the epilayer and substrate. This presents us with an excellent opportunity to study misfit dislocation nucleation, multiplication and reactions over a wide range of compressive and tensile strengths. We also intend to investigate phenomena such as quaternary alloy ordering and epilayer cracking in these systems.Further goals of this project are to identify the practical range of quaternary compositions and layer thicknesses which are suitable for use in strained layer optoelectronic devices. We also wish to correlate basic device properties such as radiative efficiency and p-n junction leakage with microstructural observations.
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Organisation Website: http://www.liv.ac.uk