EPSRC Reference: |
GR/K70526/01 |
Title: |
POLYSILICON-GERMANIUM THIN FILM TRANSISTORS FOR ACTIVE MATRIX LIQUID CRYSTAL DISPLAY TECHNOLOGY |
Principal Investigator: |
Parker, Professor G |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronics and Computer Science |
Organisation: |
University of Southampton |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 December 1995 |
Ends: |
30 November 1996 |
Value (£): |
63,272
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EPSRC Research Topic Classifications: |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The overall aim of this project is to fabricate passivated n and p-channel TFTs in poly SiGe on quartz substrates. We shall use quartz substrates rather than glass in order to maintain compatibility with our other clean-room processes which cannot admit the possible contamination associated with glass. However, in our study of TFT fabrication on quartz, our processing temperatures will not be above 600oC in order to be compatible with a glass substrate-based process. In carrying out this work programme we will: (i) deposit amorphous SiGe by LPCVD on oxidised Si substrates, (ii) deposit amorphous SiGe by PECVD on oxidised Si substrates, (iii) laser recrystallise the as-deposited amorphous SiGe to form ply SiGe, (iv) study the passivation effects of fluorination and hydrogenation, (v) fabricate and characterise n and p-channel TFTs in the passivated poly SiGe on oxidised Si substrates, (vi) fabricate and characterise n and p-channel TFTs in the passivated ply SiGe on quartz substrates. Key Words: SoGe, Poly SiGe, Amorphous SiGe, Thin-Film Transistors, Flat-Panel Display, Active Matrix Liquid Crystal Display, Fluorine Passivation
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.soton.ac.uk |