EPSRC Reference: |
GR/K73787/01 |
Title: |
MODELLING OF HETEROJUNCTION GUNN DIODES |
Principal Investigator: |
Kearney, Professor M |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic, Electrical & Systems Enginee |
Organisation: |
Loughborough University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
29 July 1996 |
Ends: |
28 January 1999 |
Value (£): |
103,628
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EPSRC Research Topic Classifications: |
Optoelect. Devices & Circuits |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The aim of this proposal is to develop a dc and rf modelling and simulation package which will enable graded gap GaAs Gunn diodes to be routinely designed and manufactured. This modelling package will elucidate the physical principals of operation of these devices, and will identify key constraints and tolerance that must be observed during their growth and fabrication. This should enable existing and one-off, proof-of concept device results to be realised on a regular basis, resulting in a world leading product with the potential for great exploitation in the lucrative car radar market (for instance). It is also expected that the contributions to the theory of high-field, high frequency transport will be of fundamental interest in their own right.
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Key Findings |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.lboro.ac.uk |