EPSRC Reference: |
GR/L18310/01 |
Title: |
SI-SIGEQUANTUM DOT-BASED ELECTROLUMINESCENT DIODE |
Principal Investigator: |
Wilkinson, Professor C |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronics and Electrical Engineering |
Organisation: |
University of Glasgow |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 April 1996 |
Ends: |
31 March 1998 |
Value (£): |
158,366
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EPSRC Research Topic Classifications: |
Optoelect. Devices & Circuits |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
It is proposed to fabricate quantum dots by deep etching to make them into light emitting diodes. Much of the work proposed here is technology development (improve insulating layer, transparent electrical contacts) to improve the performance of the diode and to test the limits of frequency response, temperature and time-stability, quantum efficiency among others. The preliminary diodes emit very bright light near 1.3mm. On the science aspect it is proposed to carry out optical and possibly magneto-optical studies to elucidate the origin of the efficient emission in dots of less than approx 100 nm diameter, which in turn will allow us to improve the device design. It is suspected that the strain field redistribution in the dots after patterning may play an important role.The programme will be based in Glasgow University, where all the nanofabrication, optical studies and device design and characterisation will take place. The p-i-n Si-SiGe wafers will be grown in Linkping University, Sweden and possibly at Daimler-Benz in Ulm, Germany. Other wafers will be donated by Warwick University and the Semiconductor IRC (IC London) for scientific studies of optical emission.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.gla.ac.uk |