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Details of Grant 

EPSRC Reference: GR/L18310/01
Title: SI-SIGEQUANTUM DOT-BASED ELECTROLUMINESCENT DIODE
Principal Investigator: Wilkinson, Professor C
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Daimler Benz Research Centre Linkoping UNI Sweden Pre Nexus Migration
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 1996 Ends: 31 March 1998 Value (£): 158,366
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
It is proposed to fabricate quantum dots by deep etching to make them into light emitting diodes. Much of the work proposed here is technology development (improve insulating layer, transparent electrical contacts) to improve the performance of the diode and to test the limits of frequency response, temperature and time-stability, quantum efficiency among others. The preliminary diodes emit very bright light near 1.3mm. On the science aspect it is proposed to carry out optical and possibly magneto-optical studies to elucidate the origin of the efficient emission in dots of less than approx 100 nm diameter, which in turn will allow us to improve the device design. It is suspected that the strain field redistribution in the dots after patterning may play an important role.The programme will be based in Glasgow University, where all the nanofabrication, optical studies and device design and characterisation will take place. The p-i-n Si-SiGe wafers will be grown in Linkping University, Sweden and possibly at Daimler-Benz in Ulm, Germany. Other wafers will be donated by Warwick University and the Semiconductor IRC (IC London) for scientific studies of optical emission.
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Organisation Website: http://www.gla.ac.uk