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EPSRC Reference: GR/L25417/01
Title: RELATIONSHIP BETWEEN LOCAL STRUCTURE AND REFLECTANCE ANISOTROPY FROM III-V SURFACES GROWN BY MOCVD
Principal Investigator: Pemble, Professor M
Other Investigators:
Researcher Co-Investigators:
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Department: Advanced Materials & Surfaces (Res Cen)
Organisation: University of Salford
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 1997 Ends: 31 October 2000 Value (£): 173,105
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
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Panel History:  
Summary on Grant Application Form
The proposed research aims to study freshly-prepared III-V surfaces emerging from an MOCVD reactor using a novel combination of reflectance anisotropy spectroscopy (RAS) and scanning probe microscopy (SPM). Surfaces will be studied under controlled atmosphere conditions so as to determine the nature of their local structure in relation to the RAS signature recorded without the inherent complication of oxide formation. A data base will be created which correlates RAS signature with surface structure / reconstruction and stoichiometry which will be directly related to that which has already been established for III-V surfaces under high vacuum growth conditions. The work will address particular aspects of MOCVD growth which have hitherto not been explored at the microscopic level - namely the structural consequences of using alternative group V sources tertiarybutyl arsine and tertiarybutyl phospine for all stages of growth of binaries, ternaries and quaternaries on (001) GaAs and (001) InP, the possible advantage of growth interruption and controlled annealing, the influence of that common dopant species such CC14, SiH4 and (CH3) 2Zn have upon the growing surface and the role that potential surfactant species may play in modifying layer quality. All MOCVD / RAS facilities are available at Salford having been provided under previous SERC / EPSRC grants.
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Organisation Website: http://www.salford.ac.uk