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Details of Grant 

EPSRC Reference: GR/L40366/01
Title: FOCUSED ION BEAM ETCHING FOR NEW LASER DIODE CONSTRUCTION,MODIFICATION AND POST PROCESSING
Principal Investigator: Sibbett, Professor W
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics and Astronomy
Organisation: University of St Andrews
Scheme: Standard Research (Pre-FEC)
Starts: 01 June 1997 Ends: 31 May 1998 Value (£): 36,918
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Aerospace, Defence and Marine Communications
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This joint proposal involving Bristol University (EE&Physics) and St Andrews (Physics), and in collaboration with Cambridge, aims to develop a facility for post-processing laser diodes so that new structures can be constructed for a wide range of applications. By using a high-performance focused ion beam gun system with integral mass and optical spectrometers for in-situ etch monitoring, it is proposed to modify high quality commercial laser chips, eg by fabricating shaped partial or complete internal mirrors, gratings for selective lenses while the device performance is being monitored. The approach allows excellent control of etch in all three space dimensions and the complete system will afford full profile etching such that new types of devices can be constructed. The main emphasis of the work will be on high-power and short-pulse lasers although user-related work will be relevant to advances in beam control and functionality. In particular the project will study: (I) MOPA lasers with novel etched facets, (ii) shaped mirrors and guides for high beam quality from laser arrays, (iii) novel diode laser coupled cavities for short pulse generation and (iv) techniques for controlling the beam shape from diode lasers for coupling into optical fibres, semiconductor waveguides and mode-matching in minilasers.
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Organisation Website: http://www.st-and.ac.uk