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Details of Grant 

EPSRC Reference: GR/L48836/01
Title: A SIGE ON INSULATOR TECHNOLOGY FOR HIGH SPEED, LOW POWER MOBILE COMMUNICATIONS APPLICATION
Principal Investigator: Gamble, Professor H
Other Investigators:
Armstrong, Dr B M McNeill, Dr D Armstrong, Professor G A
Researcher Co-Investigators:
Project Partners:
Pre Nexus Migration QinetiQ Zarlink
Department: Sch of Electronics, Elec Eng & Comp Sci
Organisation: Queen's University of Belfast
Scheme: Standard Research (Pre-FEC)
Starts: 01 August 1997 Ends: 31 October 2000 Value (£): 455,293
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Energy Efficiency
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal is for a collaborative programme of research to develop SiGe HBT technology for mobile communication applications up to and beyond 5.5ghz. High speed and low power consumption will be achieved by producing SiGe HBTs on wafer bonded SOI substrates incorporating buried silicide layers. Experimental work will include studies of process uniformity, defect control and yield for different device architectures and SiGe growth methods, including selective and non-selective LPCVD SiGe growth and gas source MBE. Theoretical work will include the devising of improved circuit models for SiGe HBTs on Si and SOI substrates, which incorporate mechanisms such as neutral base recombination and self-heating in Si islands. In addition, mixed mode circuit simulations will be performed to investigate how the overall device and process design can be optimised to give minimum power consumption consistent with circuit operation at 5.5ghz and beyond. Fundamental scientific issues addressed by the project will include the introduction of carbon into SiGe to suppress transient enhanced diffusion (TED), investigations of novel process architectures which avoid direct implantation into SiGe and hence avoid TED and investigations of the effectiveness of buried silicides for heat removal from SOI islands.
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Further Information:  
Organisation Website: http://www.qub.ac.uk