| EPSRC Reference: |
GR/L59597/01 |
| Title: |
ROPA: FABRICATION AND CHARACTERIATION OF NOVEL SINGLE ELECTRON DEVICES |
| Principal Investigator: |
Klipstein, Dr P |
| Other Investigators: |
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| Department: |
Oxford Physics |
| Organisation: |
University of Oxford |
| Scheme: |
ROPA |
| Starts: |
01 August 1997 |
Ends: |
31 July 1999 |
Value (£): |
100,698
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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By reducing the area of semiconductor resonant tunnelling structures, new quantum mechanical processes become dominant and single electron behaviour can result eg Coulomb blockade and artificial atom effects. Fabrication methods will be developed for novel double well and interband tunnelling devices, so that new many body effects and tunnelling processes recently observed in these systems may be explored as a function of electron number. Lateral symmetry/shape effects in conventional double barrier devices will also be studied using a novel split gate arrangement. Potential applications include very low power/high density multi-value logic devices and memory cells, and modulated Thz radiation sources.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ox.ac.uk |