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Details of Grant 

EPSRC Reference: GR/L62481/01
Title: GASB/GAAS HETEROJUNCTIONS FOR THERMOPHOTOVOLTAIC AND SOLAR CELLS
Principal Investigator: Haywood, Professor S
Other Investigators:
Scott, Dr C
Researcher Co-Investigators:
Project Partners:
Department: Engineering
Organisation: University of Hull
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 1998 Ends: 31 March 2000 Value (£): 128,865
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits Solar Technology
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
Most GaSb photovoltaic cells incorporate diffused junctions for economic reasons, even though diffusion encourages grading. Here we propose to investigate an alternative to such devices based on a pGaSb/nGaAs heterojunction grown by MOVPE on a GaAs substrate. Lattice-mismatched heterojunctions are not normally considered for solar cells because high recombination rates are expected to result from dislocations at the interface; hence efficiency is reduced. However, out previous work has shown that despite the 7% lattice mismatch between GaSb and GaAs, reverse bias leakage currents are almost two orders of magnitude lower than for comparable GaSb homojunctions. Since there is a strong correlation between reverse bias and forward bias characteristics is should be possible to produce a GaSb/GaAs photovolataic cell with a performance equal to or better than that of a GaSb homojunction. Acting alone these would provide a cheaper TPV than those currently available as they can be grown on GaAs substrates. In conjunction with a mechanically-stacked GaAs cell these devices could also act as booster cells for space applications providing a cheaper version of existing tandem cells with the potential for improved efficiency. Once these objectives are achieved we plan to investigate integrated GaAs/GaSb soar cells.
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Organisation Website: http://www.hull.ac.uk