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Details of Grant 

EPSRC Reference: GR/L92952/01
Title: ADVANCED LASER DIODE STRUCTURES FOR HIGH QUALITY BEAM GENERATION
Principal Investigator: Sibbett, Professor W
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics and Astronomy
Organisation: University of St Andrews
Scheme: Standard Research (Pre-FEC)
Starts: 01 June 1998 Ends: 30 November 2000 Value (£): 81,802
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
A significant component of this project effort relates to the development and application of higher-power diode laser (laser/amplifier) devices that have enhanced spatial / spectral / temporal performances. Both vertical cavity surface emitting lasers (VCSELs) and edge-emitting laser types will be investigated. VCSEL devices will be developed with the aim of producing beams with annular crossections with the objective of demonstrating efficient optical tweezing. In the latter instance the emphasis will be on beam-refined red diodes (ALgAiNp) for the pumping of solid state minilaser systems and near infrared AlGaAs, InGaAs, InGaAsP diodes that will be used directly in nonlinear frequency conversion techniques. It is planned to demonstrate femtosecond pulse generation both via simultaneous frequency doubling and temporal compression of linearly-chirped, picosecond (~20ps) diode laser pulses and by exploiting Kerr-lens mode-locking using external-cavity lasers. Further activity in non-linear frequency conversion would be carried out using optically-pumped VCSEL devices as the spatially/spectrally-refined driver sources.
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Organisation Website: http://www.st-and.ac.uk