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Details of Grant 

EPSRC Reference: GR/L94338/01
Title: MEASUREMENT OF THE PIEZOELECTRIC PROPERTIES OF ALGAN THIN FILMS
Principal Investigator: Chalker, Professor PR
Other Investigators:
Joyce, Dr TBF
Researcher Co-Investigators:
Project Partners:
Accentus plc
Department: Materials Science & Eng
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 01 March 1998 Ends: 31 May 1999 Value (£): 49,966
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This Fast Stream proposal is a 15 month feasibility study to assess the piezoelectric properties of Aluminium Gallium Nitride thin films. Aluminium nitride (AlN) and gallium nitride (GaN) are both piezoelectric materials and a continuos series of wurtzitic phase AlxGa1-zN alloys is achievable. Little is known about the electromechanical properties of hereroepitaxial thin films of the AlGaN alloys. The III-nitrides have significant potential for exploitation as piezoelectric materials in microactuators such as surface acoustic wave devices. To realise this technological potential it is important to understand the piezoelectric property of the materials so that they can be exploited or accommodated for in electronic device designs. This proposal addresses the low temperature deposition of AlGaN films onto (0001) sapphire substrates which will necessitate appropriate AlN buffer layers to minimise lattice mismatch. The formation of these buffer layers will be studied in-situ using Reflection Anisotropy Spectroscopy. Subsequent low temperature growth of AlGaN thin films will be achieved using neutral atomic nitrogen fluxes with gallium and aluminium metallorganic precursors. The resulting films will be characterised in terms of composition, lattice parameter and in-plane piezoelectric coefficients.
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Organisation Website: http://www.liv.ac.uk