| EPSRC Reference: |
GR/M37431/01 |
| Title: |
NEW APPROACHES TO DOPING THIN FILM DIAMOND FOR THE FORMATION OF HIGH PERFORMANCE ELECTRONIC DEVICES |
| Principal Investigator: |
Foord, Professor J |
| Other Investigators: |
|
| Researcher Co-Investigators: |
|
| Project Partners: |
|
| Department: |
Oxford Chemistry |
| Organisation: |
University of Oxford |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 December 1998 |
Ends: |
30 November 2002 |
Value (£): |
95,432
|
| EPSRC Research Topic Classifications: |
| Design & Testing Technology |
Materials Characterisation |
| Materials Processing |
|
|
| EPSRC Industrial Sector Classifications: |
| Aerospace, Defence and Marine |
Electronics |
| Energy |
|
|
| Related Grants: |
|
| Panel History: |
|
|
Summary on Grant Application Form |
|
The applicants have recently demonstrated the exciting potential for high performance diamond device fabrication using hydrogen 'doping' the impact of such devices could be significant. For example, whilst first generation diamond photodetectors, designed by the applicants are being commercially produced under licence, future generations of devices will critically rely on improvements in current doping technology. Sensing devices for use in harsh environments (radiation, gas, pressure, temperature) can be envisaged as well as diamond control electronics. High power devices are another application area. However, the realisation of useful devices critically requires control over carrier concentrations, depths and lateral position that can not be achieved with the simple approach adopted to date. The proposed programme will investigate the use of three novel methods for the controlled incorporation and activation of hydorgen within diamond films. The diamond will be fully characterised in terms of H distribution and electornic properties. Metallisation schemes which offer low contact resistance and varying Schottky barrier heights are also required along with the provision of improved micron scale device designs. MESFET structures will be fabricated as demonstrator devices such that the performance levels, stability and resilience of device based on H-doped diamond can be fully evaluated.
|
|
Key Findings |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Potential use in non-academic contexts |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Impacts |
|
| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
|
| Date Materialised |
|
|
|
|
Sectors submitted by the Researcher |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
| Project URL: |
|
| Further Information: |
|
| Organisation Website: |
http://www.ox.ac.uk |