| EPSRC Reference: |
GR/M54568/01 |
| Title: |
ROPA: STABILITY OF DEUTERATED AMORPHOUS SILICON THIN FILM TRANSISTORS |
| Principal Investigator: |
Milne, Professor WI |
| Other Investigators: |
|
| Researcher Co-Investigators: |
|
| Project Partners: |
|
| Department: |
Engineering |
| Organisation: |
University of Cambridge |
| Scheme: |
ROPA |
| Starts: |
27 September 1999 |
Ends: |
26 January 2002 |
Value (£): |
121,800
|
| EPSRC Research Topic Classifications: |
|
| EPSRC Industrial Sector Classifications: |
|
| Related Grants: |
|
| Panel History: |
|
|
Summary on Grant Application Form |
|
The a-Si:H based TFT pixel switches used in present AMLCDs still suffer from instabilities under prolonged gate bias. Two possible causes of the observed instability are (a) the creation of states in the a-Si:H itself or (b) charge trapping in the gate insulator. This project will investigate the use of deuterated amorphous silicon for the manufacture of TFT switches. It is envisaged that deuterium stabilization should lead to improved stability if defect creation dominates. The use of Deuterium should also resolve the role of the Si-Si bond versus the Si- H bond breaking in the defect creation and annealing processes observed in amorphous silicon based TFTs.
|
|
Key Findings |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Potential use in non-academic contexts |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Impacts |
|
| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
|
| Date Materialised |
|
|
|
|
Sectors submitted by the Researcher |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
| Project URL: |
|
| Further Information: |
|
| Organisation Website: |
http://www.cam.ac.uk |