EPSRC Reference: |
GR/M66868/01 |
Title: |
ALINGAAS QUANTUM WELLS FOR 680 TO 850NM STRAINED LAYER LASERS |
Principal Investigator: |
Sale, Dr TE |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Surrey |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
11 June 1999 |
Ends: |
10 June 2001 |
Value (£): |
35,918
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EPSRC Research Topic Classifications: |
Optoelect. Devices & Circuits |
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EPSRC Industrial Sector Classifications: |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The aim of this programme is to investigate and promote the development of strained layer A1InGaAs quantum well material for laser diodes for 680 to 850nm emission. This material is already being developed in the Sheffield facility, work with which the principal investigator has been involved, but which does not benefit from significant EPSRC funding. These wavelengths are of interest for a wide variety of data communications, medical, solid state pump and other applications. The combination of A1 and In allows introduction of strained layers which will being about: low thresholds, increased efficiency, improved high temperature performance, high speed operation. VCSELs are of particular interest for data communications at 850nm. A strained layer active region will significantly improve their efficiency by broadening the optical gain spectrum. This will be modelled and experimentally verified on edge emitting laser structures requested from the Sheffield facility.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.surrey.ac.uk |