EPSRC Reference: |
GR/M67582/01 |
Title: |
A HIGH EFFICIENCY GALLIUM ARSENIDE X-RAY IMAGING SENSOR WITH INTEGRATED HEMT READOUT CIRCUITRY |
Principal Investigator: |
Sellin, Professor PJ |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Surrey |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
19 May 1999 |
Ends: |
18 May 2001 |
Value (£): |
37,056
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EPSRC Research Topic Classifications: |
Materials Characterisation |
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EPSRC Industrial Sector Classifications: |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
A high efficiency digital X-ray imaging sensor is proposed fabricated from gallium arsenide (GaAs) for applications in synchrotron and medical X-ray imaging. GaAs provides a high X-ray detection efficiency in this range of X-ray energies (10-60 keV) whereas that of silicon sensors is negligible. The proposed sensor has a monolithic design, with an integrated charge readout circuit fabricated directly onto the GaAs sensor using a matrix of High Electron Mobility Transistors (HEMTs) fabricated from epitaxial A1-GaAs Hetero-structures.Consequently the sensor avoids the need for a flip-chip bonded external readout circuit, maximising fabrication yields, and simplifying scale-up to a large scale-up to a large area-imaging device.The programme concentrates initially on the modelling and optimisation of A1-GaAs HEMT structures for sensor charge-switching applications, using fabrication facilities at the Sheffield III-V Facility. A 16 by 16 pixel prototype sensor will then be fabricated and characterised in realistic X-ray beams.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.surrey.ac.uk |