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EPSRC Reference: GR/M67582/01
Title: A HIGH EFFICIENCY GALLIUM ARSENIDE X-RAY IMAGING SENSOR WITH INTEGRATED HEMT READOUT CIRCUITRY
Principal Investigator: Sellin, Professor PJ
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Surrey
Scheme: Standard Research (Pre-FEC)
Starts: 19 May 1999 Ends: 18 May 2001 Value (£): 37,056
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
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Panel History:  
Summary on Grant Application Form
A high efficiency digital X-ray imaging sensor is proposed fabricated from gallium arsenide (GaAs) for applications in synchrotron and medical X-ray imaging. GaAs provides a high X-ray detection efficiency in this range of X-ray energies (10-60 keV) whereas that of silicon sensors is negligible. The proposed sensor has a monolithic design, with an integrated charge readout circuit fabricated directly onto the GaAs sensor using a matrix of High Electron Mobility Transistors (HEMTs) fabricated from epitaxial A1-GaAs Hetero-structures.Consequently the sensor avoids the need for a flip-chip bonded external readout circuit, maximising fabrication yields, and simplifying scale-up to a large scale-up to a large area-imaging device.The programme concentrates initially on the modelling and optimisation of A1-GaAs HEMT structures for sensor charge-switching applications, using fabrication facilities at the Sheffield III-V Facility. A 16 by 16 pixel prototype sensor will then be fabricated and characterised in realistic X-ray beams.
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Organisation Website: http://www.surrey.ac.uk