EPSRC Reference: |
GR/M70865/01 |
Title: |
ION ASSISTED PROCESSES FOR LOW TEMPERATURE POLYSILICON AMLCD ON PLASTIC |
Principal Investigator: |
Shannon, Professor J |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Sch of Electronics & Physical Sciences |
Organisation: |
University of Surrey |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 December 1999 |
Ends: |
30 November 2002 |
Value (£): |
153,732
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EPSRC Research Topic Classifications: |
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EPSRC Industrial Sector Classifications: |
Aerospace, Defence and Marine |
Electronics |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The main aim of this project is to establish ion-assisted processes for fabricating self-aligned polysilicon TFT addressed AMLCD on plastic substrates. The concept in this approach is to replace the thermal energy needed for a particular process by the energy dissipated by ion bombardment and the consequent non-equilibrium process. We have already shown that active devices for AMLCD can be made at temperatures of ~100 degrees centigrade and highly conducting silicides can be made even at room temperature using ion assisted processes; the aim here is to extend these techniques to polysilicon with a maximum processing temperature of ~150 degrees centigrade. The ability to form polysilicon devices at these low processing temperatures would enable fully integrated AMLCD to be made on the most readily available and inexpensive plastic substrates and bring with it new products that are light rugged and flexible. This project could also provide devices for integration with polymer LEDs and driver and addressing circuitry for field emission displays.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.surrey.ac.uk |