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Details of Grant 

EPSRC Reference: GR/M83421/01
Title: MODELLING THE EVOLUTION OF STRAINED SEMICONDUCTOR SYSTEMS
Principal Investigator: Gill, Dr SPA
Other Investigators:
Researcher Co-Investigators:
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Department: Engineering
Organisation: University of Leicester
Scheme: Overseas Travel Grants Pre-FEC
Starts: 01 July 1999 Ends: 31 August 1999 Value (£): 4,725
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No relevance to Underpinning Sectors
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Summary on Grant Application Form
Modern microelectronic and optoelectronic devices are constructed from a number of layers of different materials. Known as thin films, they are commonly elastically strained due to a lattice mismatch at their common interface. Hence a device can be strain engineering to optimise its optical and electronic properties. However, during processing and whilst in operation, the film will try to relax this strain. One way it can do this is by changing its shape. Such morphological changes can cause severe degradation in a devices properties and can even lead to its complete failure. These shape instabilities are predominantly initiated at material defects such as grain boundaries. It is the modelling of the surface evolution of these types of structures that is an objective of this work. Another connected problem is associated with the size of these films which, in current advances and hence atomic scale effects are becoming increasingly important. It is an ambitious objective of the proposed work to investigate new techniques for consistently incorporating significant atomic features (such as dislocations) into continuum-based models. This will aid the development of multiscale modelling in current and future engineering applications.
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Organisation Website: http://www.le.ac.uk