EPSRC Reference: |
GR/M87078/01 |
Title: |
OPTIMISATION OF GAN CONTACT TECHNOLOGY |
Principal Investigator: |
Brown, Professor PD |
Other Investigators: |
|
Researcher Co-Investigators: |
|
Project Partners: |
|
Department: |
Sch of Mech Materials Manuf Eng Mgt |
Organisation: |
University of Nottingham |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 March 2000 |
Ends: |
31 August 2003 |
Value (£): |
242,326
|
EPSRC Research Topic Classifications: |
Materials Characterisation |
|
|
EPSRC Industrial Sector Classifications: |
Electronics |
No relevance to Underpinning Sectors |
|
Related Grants: |
|
Panel History: |
|
Summary on Grant Application Form |
The primary aim of this proposal is to optimise alloyed metal contacts on (Ga, Al, In) N through direct detailed microstructural analysis and correlation with material electrical properties. A systematic study of annealed Ti/Al/Ni/Au and Ti/Pd/Ni contact reactions with n-type GaN and AlGaN will initially be performed (using both MBE and MOCVD source material), with particular attention being given to the effect of layer surface polarity on contact properties, using in-house microscopes for conventional analysis and state of the art microscopes at Cambridge and Sheffield for atomic scale structural and chemical analysis. Routes to improve contacts to p-type GaN and AlGaN will come from the detailed analysis of Au-Zn/Ni and Pd/Pt/Au interfacial reactions. The reaction of Pt and Pd-based contacts alloyed with Si and Au will be investigated to optimise GaN and AlGaN Schottky contact technology. Contacted structures will then be used to directly correlate material non-radiative recombination activity with microstructural defect content, in-situ in the electron microscope, using the STEBIC technique. Contacts to GaN and InGaN based on Ti/Pt/Au, Ni/Ge/Au and WSix will also be investigated. This programme will have direct impact on the development of wide band-gap laser structures and microwave transistors.Keywords describing areas of proposal.Materials, Metals, Semiconductors, Surfaces, Processing, Microelectronics, Lasers, Devices
|
Key Findings |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
Potential use in non-academic contexts |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
Impacts |
Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
Summary |
|
Date Materialised |
|
|
Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
Project URL: |
|
Further Information: |
|
Organisation Website: |
http://www.nottingham.ac.uk |