Details of Grant 

EPSRC Reference:	GR/N07653/01
Title:	NOVEL VERTICAL NANOSCALE DEVICES
Principal Investigator:	Childs, Dr P
Other Investigators:	Palmer, Professor RE
Researcher Co-Investigators:
Project Partners:	Sandia National Laboratory
Department:	Electronic, Electrical and Computer Eng
Organisation:	University of Birmingham
Scheme:	Standard Research (Pre-FEC)
Starts:	01 September 2000	Ends:	31 August 2003	Value (£):	246,896
EPSRC Research Topic Classifications:	Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:
Summary on Grant Application Form
In this research project single electron transistors will be fabricated through a novel use of silicon pillar technology (4-6) coupled with self-assembly techniques and cluster deposition. The proposed structures will allow gated operation of single and multiple devices with both electronic and optical applications. A novel nanoscale FET structure will also be fabricated using the pillar technology. Both devices will exploit the high level of dimensional control that can be obtained with vertical structures. The single electron transistor is comprised of an insulting nanotube, contacted at both ends, which contains a small metallic cluster having dimensions of -2nm. The structures may exhibit Coulomb blockade at room temperature and therefore has potential applications in nanoscale electronics.
Key Findings
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Further Information:
Organisation Website:	http://www.bham.ac.uk