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Details of Grant 

EPSRC Reference: GR/N07813/01
Title: INGAAS:N MATERIALS FOR UNCOOLED 1.3UM LASER TRANSMITTERS
Principal Investigator: Chalker, Professor PR
Other Investigators:
Joyce, Dr TBF Bullough, Dr T
Researcher Co-Investigators:
Project Partners:
Department: School of Engineering
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2000 Ends: 31 May 2003 Value (£): 196,232
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics Energy
Related Grants:
Panel History:  
Summary on Grant Application Form
Current phosphide based laser diodes for optical fibre communication technologies at 1.3pm wavelengths generally have poor temperature characteristics and require thermoelectric coolers for reliable operation. An alternative quaternary alloy semi conductor system has recently been proposed based on InGaAs:N/GaAs which has the potential benefits of: reduced temperature sensitivity obviating the need for thermoelectric coolers; better electron confinement; and small wavelength shifts with temperature changes.The focus of this proposal is to develop an uncooled laser diode with high thermal stability and improved optical confinement based on the InGaAs:N/GaAs system using chemical beam epitaxy. To achieve these objectives novel improvements are proposed in terms of active well composition, epitaxy and thickness; well cladding and optical confinement. The programme is multidisciplinary, bringing together expertise in materials science and device physics form the Universities of Liverpool and Essex. The project will involve significant input from Hewlett-Packard Ltd which is a world class manufacturer of laser diode devices.
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Organisation Website: http://www.liv.ac.uk