EPSRC Reference: |
GR/N07868/01 |
Title: |
GALLIUM NITRIDE VCSELS WITH BURIED DIELECTRIC BRAGG MIRRORS |
Principal Investigator: |
Martin, Professor RW |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Strathclyde |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
19 June 2000 |
Ends: |
18 June 2003 |
Value (£): |
258,825
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EPSRC Research Topic Classifications: |
Materials Synthesis & Growth |
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EPSRC Industrial Sector Classifications: |
Electronics |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
A collaborative programme is proposed to explore a novel and realistic approach to the production of Gallium Nitride based Vertical-Cavity Surface-Emitting lasers (GaN-VCSELs). The concept involves epitaxial layer overgrowth above a patterned dielectric Bragg mirror. This will produce low-loss, high-reflectance bottom mirror elements for the VCSEL devices and define the mode area, but equally important, will allow overgrowth of a high-quality GaN/GaInN/AlGaN active region and microcavity, free from threading dislocations. To allow this approach to be fully explored this proposal brings together partners with expertise in III-Nitride physics, epitaxial growth, semiconductor device design, VCSEL technology and device processing. It is further enhanced by significant commitments of support from world-leading industrial and academic external collaborators.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.strath.ac.uk |