EPSRC Reference: |
GR/R03341/01 |
Title: |
010700 |
Principal Investigator: |
Humphreys, Professor Sir C |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Materials Science & Metallurgy |
Organisation: |
University of Cambridge |
Scheme: |
Fast Stream |
Starts: |
01 November 2000 |
Ends: |
31 October 2003 |
Value (£): |
40,124
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EPSRC Research Topic Classifications: |
Materials Characterisation |
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EPSRC Industrial Sector Classifications: |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Gallium Nitride (GaN) has been the focus of extensive research in recent years for its potential applications in full colour light emitting diodes and lasers. The role of extended defects such as stacking faults and dislocations on the optical properties of GaN is poorly understood. Electron microscopy, and in particular, electron energy loss spectroscopy, is one of the few techniques that can probe optical properties with the high spatial resolution necessary to study these atomic scale defects. With these unique tools it is possible to answer the questions: do impurities accumulate at defects? and if so are the impurities responsible for the change in optical properties or if not why are defects intrinsically optically different from perfect material? . Answering these questions will suggest routes to improve material processing with the goal of producing optical devices with even better performance and more extensive applications.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.cam.ac.uk |