Details of Grant 

EPSRC Reference:	GR/R09268/01
Title:	High-Pressure Investigations of Self-Assembled Quantum Dots
Principal Investigator:	Itskevich, Dr I
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department:	Engineering
Organisation:	University of Hull
Scheme:	Fast Stream
Starts:	22 November 2000	Ends:	21 November 2003	Value (£):	57,898
EPSRC Research Topic Classifications:	Materials Characterisation
EPSRC Industrial Sector Classifications:	Communications Electronics
Related Grants:
Panel History:
Summary on Grant Application Form
High pressures will be applied to a variety of In(Ga)As/(AI)GaAs self-assembled-quantum-dot (SAQD) hetrostructures in order to obtain detailed quantitative information about confined electronic states. Despite numerous investigations, the electronic level structure in SAQD is still poorly understood, and many issues are a matter of controversy. A diamond-anvil cell and a liquid-clamp cell with an optical window will be used, and quantum dots will be studied by means of photo- and electroluminescence techniques. The extra thermodynamic variable of pressure allows control of the electronic properties of the SAQD hetrostructures. The pressure sufficient for the Gamma-X crossover in the conduction band will be achieved and this effect used to determine the nature of confined states in SAQD and to reveal the selection rules for optical transitions. It is also planned to obtain key parameters of SAQD heterostructures, like band offets, and to determine the mechanisms of carrier relaxation. For vertically stacked quantum dots, the degree of the inter-dot coupling will be varied by pressure, with the aim of determining the relative contributions of tunnelling and electrostatic interaction in the coupling. Experiments on individual quantum dots are also planned to probe the strength of the Gamma-X interaction for quantum-dot states and to determine the nature of the optical transitions in the dots. An overall aim of the investigations is to achieve a comprehensive understanding of the fundamental properties of SAQD, and provide input parameters for design of SAWD-based optoelectronic devices.
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Organisation Website:	http://www.hull.ac.uk