EPSRC Reference: |
GR/R21073/01 |
Title: |
Large Signal Model Including Temperature Effects For Gallium Nitride Power Hemt |
Principal Investigator: |
Oxley, Dr CH |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
School of Engineering & Technology |
Organisation: |
De Montfort University |
Scheme: |
Fast Stream |
Starts: |
02 August 2001 |
Ends: |
01 August 2004 |
Value (£): |
60,201
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EPSRC Research Topic Classifications: |
Electronic Devices & Subsys. |
Materials Characterisation |
RF & Microwave Technology |
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EPSRC Industrial Sector Classifications: |
Electronics |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is of significant interest worldwide because of its potential benefits in terms of output power and bandwidth in comparison to Gallium Arsenide (GaAs) and Indium Phosphide (InP) technologies. The aim of the proposed work is to characterise single cell GaN HEMT devices supplied by the industrial partner-DERA for their dc, ac & rf performance. The experimental data will be used to develop accurate small and large signal equivalent circuit models taking into account the reported large extension of the depletion layer and self heating effects. These models will be validated using rf output power and load-pull measurements. Due to higher power density, the self-heating effects for GaN devices will be higher than for GaAs devices which can detrimentally effect its performance advantages. Novel infra red microscope measurements of the temperature profile at the gate under large signal measurements will be undertaken to derive a simple thermal model, which can be used to determine optimum cell spacing for maximum output power for a given cut-off frequency. This work will enable, for the first time, device scaling issues to theoretically determine maximum output power/frequency limitations for different impedance matching configurations. This work is very timely with material and simple devices becoming available in the UK.
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Key Findings |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.dmu.ac.uk |