Details of Grant 

EPSRC Reference:	GR/R29130/01
Title:	Series Operation of Igbt Devices In High Voltage Applications
Principal Investigator:	Palmer, Dr P
Other Investigators:
Researcher Co-Investigators:
Project Partners:	Dynex Semiconductor (CRRC Times UK)
Department:	Engineering
Organisation:	University of Cambridge
Scheme:	Standard Research (Pre-FEC)
Starts:	01 September 2001	Ends:	31 August 2004	Value (£):	62,354
EPSRC Research Topic Classifications:	Power Electronics
EPSRC Industrial Sector Classifications:	Electronics Energy
Related Grants:	GR/R19762/01
Panel History:
Summary on Grant Application Form
High frequency power switching techniques are well established in such applications as utility interface, power conditioning and motor control. If the power range of such techniques is to be extende, high voltage switches capable of being series connected in high voltage bridge-leg or single ended chopper modes are required. Traditionally thyristor or GTO stacks were used in such applications; the former has no self commutating ability whilst the latter, although self-communtating, requires substantial snubber circuitry.IGBT's have a simple gate drive requirement and may be operated in the active region to control stress sharing during switching. This approach allows a substantial reduction in the requirements for auxiliary stresses sharing circuits.Active gate control techniques have been shown to be effective in the control of series IGBT stacks, particularly during the turn-off transient. However problems remain in terms of controlling the over voltage associated with diode recovery, potential controller interaction and distribution of losses. Such effects are exacerbated at higher voltages where the number of series devices increases.The techniques developed will involve the series connection of 4.5kV, 400A (6.5kV when available) IGBT technology capable of bridge-leg operation at voltages over 10kV.
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Organisation Website:	http://www.cam.ac.uk