| EPSRC Reference: |
GR/R30006/01 |
| Title: |
Carrier Generation and Transport Within Hydrogen 'Doped' Thin Film Diamond |
| Principal Investigator: |
Foord, Professor J |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Oxford Chemistry |
| Organisation: |
University of Oxford |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
24 September 2001 |
Ends: |
23 September 2004 |
Value (£): |
54,229
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Synthesis & Growth |
| Surfaces & Interfaces |
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| EPSRC Industrial Sector Classifications: |
| Aerospace, Defence and Marine |
Electronics |
| Environment |
Transport Systems and Vehicles |
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| Related Grants: |
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| Panel History: |
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Summary on Grant Application Form |
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It has recently been recognised that hydrogen within the near surface region of CVD grown diamond films acts in unison with other defects present, and possibly with adsorbates, to promote p-type conductivity in this region of the film. The applicants have been at the forefront of this discovery and, with the assistance of an EPSRC award have produced some of the first high performance electronic devices based upon this approach to 'doping' CVD diamond. We have also developed a stable and reliable means for promoting the formation of this p-type character. However, very little is known about transport characteristics within such films. Preliminary studies, carried out by the applicants over the last sic months, have produced some exciting results. These indicate that not only very high mobilities can be achieved, but the acceptor states responsible emerge with little activation. However, these preliminary results also show that other forms of conduction are also occuring, perhaps involving an impurity band, and that the nature of the surface finish and post-growth treatment strongly influence the over all transport characteristics. Whilst the preliminary data Is not detailed enough for a full analysis, it is dear that a number of processes need to be understood and controlled for this approach to doping CVD diamond to become truly useful. The proposed programme will aim to fully study these effects, combining low temperature measurements (which have not been carried out before) with theoretical modelling. In this manner a detailed picture of carrier generation, transport and defect structure within the surface region of hydrogenated diamond films will emerge, This information is of considerable importance since it impacts on a number of very important areas within diamond technology. These include, of course, the formation of high performance devices, but also on the nature of the growth surface and the influence of defects left at the termination of growth (and introduced after growth by, for example, polishing) on film properties. The work is both novel and timely and will be of great interest to the significant worldwide diamond community, and to industrial companies that are exploiting the unique range of properties displayed by diamond for a wide range of applications.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ox.ac.uk |