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Details of Grant 

EPSRC Reference: GR/R39993/01
Title: Analysis and Simulation of Semiconductor Photodetectors for Mid-Infrared Applications
Principal Investigator: Krier, Professor A
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Lancaster University
Scheme: Standard Research (Pre-FEC)
Starts: 16 April 2002 Ends: 15 September 2003 Value (£): 38,095
EPSRC Research Topic Classifications:
Materials Synthesis & Growth Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Within the present proposal we now wish to build on our existing knowledge by developing theoretical models and simulation codes to improve our understanding of detector operating characteristics which will assist us in optimising our devices further. Generic models will be developed first, leading on to more specific simulation codes for the devices already being developed at Lancaster before leading into more advanced structures. The devices proposed to be investigated include; (a) Non-multiplying conventional heterojunction semiconductor photodetectors based on p-i-n InGaAs/InAsSbP and InAsSb/InAsSbP heterostructures for operation in the 2-5p,m region, followed by (b) Heterojuction Avalanche photodetectors (HAPD) again based on the above materials and leading to a newly proposed HAPD known as photo-DOVATT which are based on the previous expertise of Dr. Chakrabarti.
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Organisation Website: http://www.lancs.ac.uk