EPSRC Reference: |
GR/R43402/01 |
Title: |
Improved Processing of High Mobility Narrow Gap Semiconductors for Sensor Applications |
Principal Investigator: |
Cohen, Professor LF |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
Imperial College London |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 November 2001 |
Ends: |
31 July 2004 |
Value (£): |
219,174
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Processing |
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EPSRC Industrial Sector Classifications: |
Aerospace, Defence and Marine |
Manufacturing |
Electronics |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Very thin (- 100nm) films of narrow gap semiconductors will be prepared with high carrier mobilities close to the phonon limit at room temperature. Such high mobility matreials have only been previously available in bulk or thick film (- 1 micrometer) form. The new very thin film material will be used to fabricate prototypes of a new class of magnetic sensor based on Extraordinary Magnetoresistance (EMR). These new sensors will find important applications in a number of technologies ranging from read heads in high density magnetic recording to position sensing in automobile engines and disk brakes.
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Key Findings |
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Potential use in non-academic contexts |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.imperial.ac.uk |